Image sensor and image capturing apparatus

ABSTRACT

An image sensor, comprising a pixel region in which a plurality of pixel units are arranged, each pixel unit having first and second photoelectric conversion portions, a first output portion that outputs, outside of the image sensor, a first signal based on a signal from the first photoelectric conversion portion of the pixel units, and a second output portion that outputs a second signal based on a signal from the first photoelectric conversion portion and a signal from the second photoelectric conversion portion of the pixel units, wherein output of the first signal from the first output portion and output of the second signal from the second output portion are performed in parallel.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 16/059,182,filed Aug. 9, 2018, which is a continuation of application Ser. No.14/984,465, filed Dec. 30, 2015, which issued as U.S. Pat. No.10,070,088 on Sep. 4, 2018, the entire disclosures of which is herebyincorporated by reference.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to an image sensor and an image capturingapparatus.

Description of the Related Art

In recent years, image sensors used in image capturing apparatuses, suchas digital still cameras and digital video cameras, are becomingincreasingly multifunctional.

Japanese Patent Laid-Open No. 2013-106194 discloses a technique toenable focus detection of a pupil-division type in an image sensor.According to Japanese Patent Laid-Open No. 2013-106194, each pixelcomposing the image sensor has two photodiodes that are configured toreceive beams of light that have passed through different pupils of animage capture lens with the aid of one microlens. In this way, focusdetection can be performed on the image capture lens by comparingsignals output from the two photodiodes with each other, and a signal ofa captured image can be obtained from a combined signal derived from thetwo photodiodes.

Japanese Patent Laid-Open No. 2013-106194 also discloses the followingmethod: after reading out a reset level signal and a signal of a firstphotodiode, a signal of a second photodiode is combined withoutresetting, the resultant combined signal is read out, and the signal ofthe second photodiode is obtained by subtracting the signal of the firstphotodiode from the resultant combined signal. With this method, thereset level signal can be used in common for the signals of the firstand second photodiodes, and thus readout of the reset level signal canbe reduced by one session.

Meanwhile, Japanese Patent Laid-Open No. 2014-72541 discloses a methodof obtaining a signal of a captured image by reading out signals offirst and second photodiodes in parallel, applying A/D conversion to thesignals, and then digitally combining the signals.

In the case of an image sensor in which two photodiodes are provided perpixel, in order to obtain a signal for focus detection and a signal fora captured image, it is necessary to acquire individual signals of thetwo photodiodes, as well as a combined signal derived therefrom. Animage capturing apparatus described in Japanese Patent Laid-Open No.2013-106194 reads out a combined signal for a captured image afterreading out a signal of a first photodiode for focus detection, andhence does not allow for simultaneous acquisition of a signal for focusdetection and a signal for a captured image. This has the risk ofsignificantly increasing a readout time period compared to aconventional image sensor in which one photodiode is provided per pixel.On the other hand, an image capturing apparatus described in JapanesePatent Laid-Open No. 2014-72541 can obtain a signal for a captured imageonly if it executes combining processing after reading out signals offirst and second photodiodes for focus detection.

SUMMARY OF THE INVENTION

The present invention provides an image sensor that enables high-speedreadout through parallel readout of an image capture signal and a focusdetection signal.

According to one embodiment of the invention, the invention relates toan image sensor, comprising a pixel region in which a plurality of pixelunits are arranged, each pixel unit having first and secondphotoelectric conversion portions, a first output portion that outputs,outside of the image sensor, a first signal based on a signal from thefirst photoelectric conversion portion of the pixel units, and a secondoutput portion that outputs a second signal based on a signal from thefirst photoelectric conversion portion and a signal from the secondphotoelectric conversion portion of the pixel units, wherein output ofthe first signal from the first output portion and output of the secondsignal from the second output portion are performed in parallel.

Further features of the present invention will become apparent from thefollowing description of embodiments (with reference to the attacheddrawings).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates the principle of focus detection of a pupil-divisiontype in an image sensor according to embodiments of the invention.

FIG. 2 is a block diagram showing an example of an overall configurationof an image capturing apparatus according to the embodiments of theinvention.

FIG. 3 is a circuit diagram showing an example of an overallconfiguration of an image sensor according to a first embodiment of theinvention.

FIG. 4 shows an example of a circuit configuration of pixel units in theimage sensor according to the first embodiment of the invention.

FIGS. 5A and 5B show examples of configurations of storage units andreadout units in the image sensor according to the first embodiment ofthe invention.

FIG. 6 is a timing chart showing an example of a driving method for theimage sensor according to the first embodiment of the invention.

FIGS. 7A to 7E illustrate regions for performing image capture and afocus detection operation in an image sensor according to a secondembodiment of the invention.

FIG. 8A shows an example of a configuration of readout units in theimage sensor, and FIG. 8B is a timing chart showing an example of adriving method for the image sensor, according to the second embodimentof the invention.

FIG. 9 is a timing chart showing another example of the driving methodfor the image sensor according to the second embodiment of theinvention.

FIG. 10 shows examples of configurations of storage units and readoutunits for a focus detection readout mode according to a third embodimentof the invention.

FIG. 11 shows examples of configurations of the storage units and thereadout units for a normal readout mode according to the thirdembodiment of the invention.

FIG. 12 is block diagram showing an example of an overall configurationof an image sensor according to a fourth embodiment of the invention.

FIG. 13A shows an example of a circuit configuration of pixel units, andFIG. 13B shows examples of configurations of the pixel units, storageunits, and readout units, in the image sensor according to the fourthembodiment of the invention.

DESCRIPTION OF THE EMBODIMENTS

The following describes embodiments of the present invention in detailwith reference to the drawings.

First Embodiment

First, a description is given of the principle of focus detection of apupil-division type in an image capturing apparatus according toembodiments of the invention.

FIG. 1 is a conceptual diagram showing how a beam of light that hasexited an exit pupil of an image capture lens is incident on a pixelunit. A pixel unit 100 includes a first photodiode 101A and a secondphotodiode 101B. The pixel unit 100 is provided with a color filter 110and a microlens 111.

The center of a beam of light that has exited from an exit pupil 112toward the pixel provided with the microlens 111 is regarded as anoptical axis 113. Light that has passed through the exit pupil 112 isincident on the pixel unit 100, with the optical axis 113 serving as thecenter. Some portions of the exit pupil 112 serve as pupil areas 114,115. As shown in FIG. 1, a beam of light that passes through the pupilarea 114 is received by the photodiode 101A via the microlens 111. Onthe other hand, a beam of light that passes through the pupil area 115is received by the photodiode 101B via the microlens 111. As such, thephotodiodes 101A and 101B receive light from different areas of the exitpupil 112. Thus, a phase difference can be detected by comparing signalsoutput from the photodiodes 101A and 101B with each other.

Herein, a signal obtained from the photodiode 101A and a signal obtainedfrom the photodiode 101B are defined as an A image signal and a B imagesignal, respectively. Also, a signal obtained by combining the A imagesignal and the B image signal is defined as an A+B image signal. ThisA+B image signal serves as an image capture signal, and can be used fora captured image. In an image sensor according to the embodiments of theinvention, control is performed in such a manner that the A imagesignal, the B image signal, and the A+B image signal are read out fromthe pixel unit in parallel.

A description is now given of an example of a configuration of the imagecapturing apparatus 10 according to the embodiments of the inventionwith reference to FIG. 2. In the image capturing apparatus 10 shown inFIG. 2, each block may be configured in the form of hardware using adedicated logic circuit and a memory, except for a physical device, suchas an image sensor. Alternatively, each block may be configured in theform of software realized by a computer, such as a CPU, executing aprocessing program stored in a memory.

An image capture lens 1002 forms an optical image of a subject on animage sensor 1000, and a lens driving unit 1003 performs zoom control,focus control, diaphragm control, and the like. The image sensor 1000includes a plurality of pixel units arranged in a matrix, and imports asubject image formed by the image capture lens as a signal. The imagesensor 1000 outputs A+B image signals, A image signals, and B imagesignals. A signal processing unit 1001 applies various types of signalprocessing to the A+B image signals, A image signals, and B imagesignals output from the image sensor 1000. A control unit 1004 carriesout various types of computation, executes control processing forcontrolling the entire image capturing apparatus 10, and performs afocus detection operation using the A image signals and B image signals.A memory 1005 temporarily stores image data, and a display control unit1006 performs display control for displaying various types ofinformation and captured images on a display apparatus. A recordingcontrol unit 1007 performs control involving, for example, recording orreadout of image data with respect to an attachable/removable recordingmedium, such as a semiconductor memory. An operation unit 1008 iscomposed of a button, a dial, and the like, and accepts operationalinput from a user. Note that in a case where the display apparatus is atouchscreen, this touchscreen is also included in the operation unit1008.

A description is now given of an example of a configuration of an imagesensor 1000 according to an embodiment of the invention with referenceto FIGS. 3 to 5. FIG. 3 schematically shows an overall configuration ofthe image sensor 1000. The image sensor 1000 is composed of a pixelregion 700, storage units 200, readout units 300, a vertical scancircuit 400, a horizontal scan circuit 500, and a timing generationcircuit (TG) 600. Pixel units 100 that each have two photodiodes arearrayed in the pixel region 700. Although the present embodimentexemplarily illustrates 4×4 pixel arrangement for ease of explanation, alarger number of pixels are arranged in practice. Note that a pixel unit100 at the upper left corner of the pixel region 700 is defined as apixel in the first row and the first column throughout the presentspecification, unless specifically stated otherwise. The vertical scancircuit 400 selects pixels in the pixel region 700 on a row-by-rowbasis, and transmits a driving signal to the pixels in the selected row.

The storage units 200 are provided in one-to-one correspondence withpixel columns, and store signals that have been read out from the pixelunits 100 on a row-by-row basis. The readout units 300 are provided inone-to-one correspondence with the pixel columns, apply A/D conversionto the signals stored in the storage units 200, and output the resultantsignals to the outside of the image sensor based on control signals fromthe horizontal scan circuit 500. The readout units 300 output A+B imagesignals, A image signals, and B image signals. The timing generationcircuit (TG) 600 transmits timing signals for controlling the readoutunits 300, the vertical scan circuit 400, and the horizontal scancircuit 500.

FIG. 4 is a circuit diagram showing an example of a circuitconfiguration of the pixel unit 100 in the image sensor 1000 accordingto the embodiment of the invention. Each pixel unit 100 is composed of,for example, a first photodiode 101A, a second photodiode 101B, transferswitches 102A, 102B, floating diffusions 103A, 103B, amplifier portions104A, 104B, reset switches 105A, 105B, and selection switches 106A,106B.

The photodiodes 101A, 101B function as photoelectric conversion portionsthat receive light that has passed through the same microlens, andgenerate charges corresponding to the amounts of received light. Thetransfer switches 102A, 102B transfer the charges generated by thephotodiodes 101A, 101B to the floating diffusions 103A, 103B,respectively. The transfer switches 102A, 102B are controlled by atransfer pulse signal PTX. The floating diffusions 103A, 103B functionas charge-voltage conversion portions that temporarily store the chargestransferred from the photodiodes 101A, 101B, respectively, and convertthe stored charges into voltage signals. The amplifier portions 104A,104B are amplification transistors that amplify the voltage signalsbased on the charges stored in the floating diffusions 103A, 103B,respectively, and output the amplified voltage signals as pixel signals.The amplification transistors, together with non-illustrated electriccurrent source transistors connected to column output lines 107A, 107B,constitute source followers.

The reset switches 105A, 105B are controlled by a reset pulse signalPRES, and reset the potentials of the floating diffusions 103A, 103B toa reference potential VDD. The selection switches 106A, 106B arecontrolled by a vertical selection pulse signal PSEL, and output thepixel signals amplified by the amplifier portions 104A, 104B to thecolumn output lines 107A, 107B, respectively.

FIG. 5A shows examples of configurations of the storage units 200 andthe readout units 300 according to the embodiment of the invention; forthe sake of simplicity, only configurations corresponding to two columnsare illustrated therein. The storage units 200 are configured in thesame way for all columns, and so are the readout units 300. Each storageunit 200 includes three storage circuits 201, 202, 203. The storagecircuit 201 is composed of capacitors C1, C2 that are connected inparallel; each of the capacitors C1, C2 is connected to the columnoutput line 107A at one end, and connected to a readout circuit 301within the corresponding readout unit 300 at the other end. The storagecircuit 201 stores an A image signal from the corresponding photodiode101A.

The storage circuit 203 is composed of capacitors C5, C6 that areconnected in parallel; each of the capacitors C5, C6 is connected to thecolumn output line 107B at one end, and connected to a readout circuit303 within the corresponding readout unit 300 at the other end. Thestorage circuit 203 stores a B image signal from the correspondingphotodiode 101B.

The storage circuit 202 is composed of two capacitors C3, C4; onecapacitor, C3, is connected to the column output line 107A at one end,whereas the other capacitor, C4, is connected to the column output line107B at one end. The capacitors C3, C4 are connected in common to areadout circuit 302 within the corresponding readout unit 300 at theother ends. The storage circuit 202 stores an A+B image signal from bothof the photodiodes 101A, 101B in the corresponding pixel unit 100. Notethat the capacitors C1 to C6 have the same capacitance value.

The following describes how the storage circuit 202 obtains the A+Bimage signal with reference to FIG. 5B. Provided that input terminalsT1, T2 have voltages of Va, Vb and an output terminal T3 has a voltageof Vo when the storage circuit 202 is in an initial state (reset state),charges Qa, Qb accumulated in the capacitors C3, C4 are given byExpressions 1, 2. It will be assumed that a capacitance value of thecapacitor C3 and a capacitance value of the capacitor C4 are Ca and Cb,respectively.Qa=Ca(Va−Vo)  Expression 1Qb=Cb(Vb−Vo)  Expression 2

Now, assume that the voltages of the input terminals T1, T2 have changedto Va+ΔVa, Vb+ΔVb, respectively, and the voltage of the output terminalT3 has changed to Vo+ΔVo, after signals have been read out from thephotodiodes 101A and 101B. In this case, charges Qa′, Qb′ accumulated inthe capacitors C3, C4 are given by Expressions 3, 4.Qa′=Ca{(Va+ΔVa)−(Vo+ΔVo)}  Expression 3Qb′=Cb{(Vb+ΔVb)−(Vo+ΔVo)}  Expression 4

Under the law of charge conservation, the relationship Qa+Qb=Qa′+Qb′holds, and hence Expression 5 can be derived from Expressions 1 to 4.ΔVo=(CaΔVa+CbΔVb)/(Ca+Cb)  Expression 5

In a case where the capacitors C3, C4 have the same capacitance value(Ca=Cb), a change in the voltage of the output terminal T3, ΔVo, isgiven by Expression 6.ΔVo=(ΔVa+ΔVb)/2  Expression 6

This is an average signal of the photodiodes 101A and 101B. A product ofthis signal and a doubling gain can be used as the A+B image signal.Therefore, the signal stored in the storage circuit 202 is referred toas the A+B image signal. It is sufficient to multiply the signal by thedoubling gain in, for example, the signal processing unit 1001 or thecontrol unit 1004.

Returning to the description of FIG. 5A, each readout unit 300 iscomposed of readout circuits 301, 302, 303. Specific configurations ofthe readout circuits are the same. The A image signal, A+B image signal,B image signal stored in the storage circuits 201, 202, 203 are input tothe readout circuits 301, 302, 303, respectively. Each of the readoutcircuits 301, 302, 303 includes an A/D conversion circuit 304, a memory305, and an S-N circuit 306.

The A/D conversion circuit 304 converts the analog signal stored in thestorage circuit 201, 202, or 203 to a digital signal. The A/D conversioncircuit 304 is composed of, for example, a non-illustrated comparisoncircuit and a non-illustrated counter circuit. The comparison circuitcompares a ramp signal whose voltage value changes depending on timewith the input signal stored in the storage circuit 201, 202, or 203,and when the magnitude relationship between the signals is inversed,transmits a signal to the counter circuit. Upon accepting the signalfrom the comparison circuit, the counter circuit stores a counted value.This counted value is imported and stored to the memory 305 as a digitalsignal.

The memory 305 has two memory portions for storing digital signals. Amemory portion M1 stores a later-described N signal serving as a resetsignal, whereas a memory portion M2 stores a later-described S signalserving as a light signal. The S-N circuit 306 imports the digital Nsignal and S signal stored in the memory portions M1 and M2, and storesa digital signal obtained by subtracting the N signal from the S signal.The digital signals stored in the S-N circuits 306 of the readoutcircuits 301, 302, 303 are output to digital signal lines 307, 308, 309via switches SW1, SW2, SW3, respectively. Note that in FIG. 5A,amplifiers may be provided at a stage preceding the A/D conversioncircuits 304 so as to first amplify the analog signals stored in thestorage circuits and then apply A/D conversion to the analog signals.

FIG. 6 is a driving timing chart for the image capturing apparatus 10according to the embodiment of the invention. This figure shows timingsof driving that is performed at the time of readout upon selection of acertain row by the vertical scan circuit. Referring to this figure, theswitches SW1 to SW6 in FIG. 5A are in an on state when control signalsPSW1 to PSW6 for the switches SW1 to SW6 are at an H level,respectively. Note that the control signals PSW1 to PSW6 are suppliedfrom the horizontal scan circuit 500.

At time t1, the vertical selection pulse signal PSEL for the selectedrow is set to H, the selection switches 106A, 106B of the pixel units100 in the selected row are turned on, and the pixel units 100 in theselected row are connected to the column output lines 107A, 107B. Atthis time t1, the reset pulse signal PRES is set to H, and in the pixelunits 100, the reset switches 105A, 105B are turned on and the floatingdiffusions 103A, 103B are at a reset level. Therefore, pixel signalscorresponding to the reset level of the floating diffusions are outputto the column output lines 107A, 107B.

At time t2, the reset pulse signal PRES is set to L, and thus the resetswitches 105A, 105B are turned off. At this moment, a potential at thetime of cancellation of reset of the floating diffusions 103A is storedin the storage circuits 201. A potential at the time of cancellation ofreset of the floating diffusions 103B is stored in the storage circuits203. An average potential at the time of cancellation of reset of bothfloating diffusions 103A, 103B is stored in the storage circuits 202.Pixel signals that are stored in the storage circuits at this time t2are reset level signals, and they are referred to as N signals.

From time t3 to time t4, the A/D conversion circuits 304 of the readoutcircuits 301, 302, 303 convert the N signals stored in the storagecircuits 201, 202, 203 into digital signals. The converted digitalsignals are stored to M1 of the memories 305. An operation of convertingthe N signals into the digital signals from time t3 to time t4 isreferred to as N conversion. The N signals stored in the storagecircuits 201, 202, 203 undergo the N conversion in parallel.

Thereafter, at time t5, the transfer pulse signal PTX is set to H.Consequently, the transfer switches 102A, 102B of the pixels are turnedon, charges generated through photoelectric conversion in thephotodiodes 101A are transferred to the floating diffusions 103A, andcharges generated through photoelectric conversion in the photodiodes101B are transferred to the floating diffusions 103B. The A imagesignals corresponding to the amounts of charges generated by thephotodiodes 101A are output to the column output lines 107A, whereas theB image signals corresponding to the amounts of charges generated by thephotodiodes 101B are output to the column output lines 107B. At time t6,the transfer pulse signal PTX is set to L, and thus the transferswitches 102A, 102B are turned off. At this moment, the A image signalsare stored in the storage circuits 201, and the B image signals arestored in the storage circuits 203. The A+B image signals are stored inthe storage circuits 202, as stated earlier with reference to FIG. 5B.

From time t7 to time t8, the A/D conversion circuits 304 of the readoutcircuits convert the A image signals stored in the storage circuits 201,the B image signals stored in the storage circuits 203, and the A+Bimage signals stored in the storage circuits 202 into digital signals.The converted digital signals are stored to M2 of the memories 305 ofthe readout circuits. These operations performed from time t7 to t8,i.e., an operation of converting the A image signals into the digitalsignals, an operation of converting the B image signals into the digitalsignals, and an operation of converting the A+B image signals into thedigital signals are referred to as A conversion, B conversion, and A+Bconversion, respectively. The A conversion, B conversion, and A+Bconversion are performed in parallel.

Thereafter, from time t9 to time t10, the S-N circuits 306 of thereadout circuits import the N signals stored in M1 of the memories 305,as well as the light signals (S signals) stored in M2 of the same, i.e.,the A image signals, B image signals, and A+B image signals. Then, thecorresponding N signal is subtracted from each of the A image signals, Bimage signals, and A+B image signals, and the resultant signals arestored. This processing is referred to as noise removal processing (S-Nprocessing). Through the S-N processing, fixed pattern noise and offsetcomponents can be removed from pixel signals.

At time t11, the control signals PSW1 to PSW3 are set to H, and thus theswitches SW1 to SW3 are turned on. Consequently, the S-N circuits 306 ofthe readout unit 300 in the first column are connected to the digitalsignal lines 307, 308, 309. Then, the A image signal, A+B image signal,and B image signal stored in the S-N circuits are output to the outsideof the image sensor 1000 via the digital signal lines 307, 308, 309.

Thereafter, at time t12, the control signals PSW4 to PSW6 are set to H,and thus the switches SW4 to SW6 are turned on. Then, the A imagesignal, A+B image signal, and B image signal stored in the S-N circuitsin the second column are output to the outside of the image sensor viathe digital signal lines 307, 308, 309. From then on, the foregoinghorizontal scanning is repeated until the last column; as a result,output of the A image signals, A+B image signals, and B image signals inthe selected row is completed.

The foregoing readout operation is repeated until the last row of thepixel region. Through this readout operation, the A image signal, A+Bimage signal, and B image signal are output in parallel from the digitalsignal lines 307, 308, 309, respectively. Under control by the controlunit 1004, the focus detection operation using the output A imagesignals and B image signals can be performed in parallel with thegeneration of a captured image using the A+B image signals. As a result,the focus detection operation and the generation of the captured imagecan be performed at a high frame rate.

Note that the S-N processing of the S-N circuits 306 shown in FIG. 5Amay be executed by the signal processing unit 1001 outside the imagesensor 1000. In this case, it is sufficient to perform control so thatthe A image signal, B image signal, A+B image signal, and correspondingN signals are output from the digital signal lines. Furthermore, A/Dconversion processing executed by the A/D conversion circuits 304 mayalso be executed by the signal processing unit outside the image sensor1000. Although the present embodiment adopts a configuration in whichboth of the A image signal and B image signal are output from the imagesensor, it may instead adopt a configuration in which only one of the Aimage signal and B image signal is output. In this case, it issufficient to generate the image signal that has not been output bysubtracting the output image signal from the A+B image signal in asignal processing circuit or the like. In this case also, the A+B imagesignal can be output in parallel with one of the A image signal and Bimage signal, and thus the captured image can be generated at a highframe rate.

As stated earlier, the A image signals and B image signals are necessaryfor the execution of focus detection processing. However, outputting theA image signals and B image signals of all pixel units 100 in the pixelregion 700 from the readout units 300 to the outside of the image sensor1000 may result in an enormous amount of signal transmission.

In some cases, correlation computation for focus detection is carriedout after converting color signals into luminance signals. In view ofthis, the readout units 300 may execute computation processing forconverting the A image signals and B image signals of each color intoluminance signals before they are output from the image sensor 1000; inthis way, the amount of signal transmission can be reduced toone-fourth.

For example, luminance signals YA, YB are generated by calculatingluminance values through application of Bayer merging to the A imagesignals and B image signals. As signals corresponding to a Bayer patternare necessary in computation of luminance values, pixel signals thathave been read out by the readout units 300 are stored in the memoriesuntil all of the signals necessary for the computation are obtained.That is to say, as signals in a row corresponding to G and B are readout after signals in a row corresponding to R and G are read out, the Aimage signals and B image signals in the row corresponding to R and Gare first stored to the memories, and once the signals in the rowcorresponding to G and B have been read out, luminance signals YA, YBare sequentially computed and output via the signal lines.

As described above, the readout units 300 of the image sensor 1000execute signal processing for outputting the A image signals and B imagesignals to the outside of the image sensor after the A image signals andthe B image signals have been converted into luminance signals. In thisway, the amount of signal transmission can be reduced, and both capturedimage data and focus detection information can be output at high speed.

Second Embodiment

In the above first embodiment, control is performed so that A imagesignals, B image signals, and A+B image signals are output across theentire pixel region; alternatively, control may be performed so that Aimage signals and B image signals are output only in a region where afocus detection operation is performed. In view of this, the presentsecond embodiment describes a control method for outputting A+B imagesignals across the entire pixel region, and outputting A image signalsand B image signals only from pixel units belonging to a part of thepixel region in accordance with the positions of pixel units that areintended to output signals in the pixel region. In this case, withregard to a region where A image signals and B image signals are notread out, consumption of electric power can be reduced by stopping thesupply of an electric power source to readout circuits 301 for A imagesand readout circuits 303 for B images shown in FIG. 5A.

FIGS. 7A to 7E illustrate regions for performing image capture and afocus detection operation in the second embodiment. In FIG. 7A, only A+Bimage signals are output in an image capture region 701, whereas A+Bimage signals, A image signals, and B image signals are output in animage capture and focus detection region 702. Note that FIG. 7A depictsa case in which the image capture and focus detection region 702 is setas a single rectangular region; alternatively, as shown in FIG. 7B,image capture and focus detection regions 702 may be set at a constantinterval, with each region corresponding to a predetermined number ofcolumns.

FIG. 8A shows an example of a configuration of readout units accordingto the second embodiment. This figure corresponds to the readout units300 according to the first embodiment shown in FIG. 5A. A detaileddescription of portions that are identical to those of the readout unitsshown in FIG. 5A is omitted. In FIG. 8A, a PSAVEA signal is a controlsignal for saving power of readout circuits 301 for A images. A PSAVEBsignal is a control signal for saving power of readout circuits 303 forB images. Setting the PSAVEA signal and the PSAVEB signal to H blocksthe supply of power source voltage or electric current to A/D conversioncircuits 304, memories 305, and S-N circuits 306 of the correspondingreadout circuits 301, 303, thereby realizing a power saving state.Control is performed so that the PSAVEA signal and PSAVEB signal areturned on/off on a column-by-column basis.

FIGS. 8B and 9 are examples of a driving timing chart according to thesecond embodiment. FIG. 8B is a driving timing chart for the imagecapture region, whereas FIG. 9 is a driving timing chart for the imagecapture and focus detection region. FIGS. 8B and 9 correspond to FIG. 6of the first embodiment, and a description of portions that areidentical, in terms of operations, to those according to the firstembodiment is omitted.

As shown in FIG. 8B, with regard to the image capture region, control isperformed so that the PSAVEA signal and PSAVEB signal are set to H. Inthis way, the readout circuits 301 for A images and the readout circuits303 for B images are placed in the power saving state, and thus Nconversion, A conversion, B conversion, and S-N processing are notperformed in these readout circuits. Furthermore, with regard to theimage capture region, during horizontal scanning from time t11, controlsignals PSW1, PSW3, PSW4, PSW6 are always at an L level, and thus Aimage signals and B image signals are not output to digital signallines. On the other hand, with regard to the image capture and focusdetection region, control is performed so that the PSAVEA signal andPSAVEB signal are set to L as shown in FIG. 9. In this case, operationsthat are identical to the operation of the first embodiment areperformed; that is to say, A+B image signals, A image signals, and Bimage signals are output to the digital signal lines.

By performing control in the above-described manner, A image signals andB image signals can be output only in a region where focus detection isperformed. In a region where A image signals and B image signals are notread out, consumption of electric power can be reduced by turning offthe electric power source for the readout circuits 301 for A images andthe readout circuits 303 for B images. Furthermore, in the presentembodiment also, the generation of a captured image and the focusdetection operation can be performed in parallel as the A+B imagesignal, A image signal, and B image signal are output in parallel. As aresult, the generation of the captured image and the focus detectionoperation can be performed at a high frame rate.

In the present second embodiment, the image capture region 701 and theimage capture and focus detection region(s) 702 are set on the basis ofcolumns as shown in FIGS. 7A and 7B; alternatively, in modificationexamples of the second embodiment, the image capture region 701 and theimage capture and focus detection region(s) 702 may be set on the basisof rows as shown in FIGS. 7C and 7D. FIG. 7C depicts a case in which animage capture and focus detection region 702 is set as a singlerectangular region, whereas FIG. 7D depicts a case in which imagecapture and focus detection regions 702 are set at a constant interval,with each region corresponding to a predetermined number of rows.Furthermore, as shown in FIG. 7E, image capture and focus detectionregions 702 may be set as small rectangular regions that are discretelyarranged. In these cases also, it is sufficient to perform driving asshown in FIG. 8B for the image capture region, and perform driving asshown in FIG. 9 for the image capture and focus detection region(s),similarly to the second embodiment. In this way, only A+B image signalscan be output in the image capture region, and A+B image signals, Aimage signals, and B image signals can be output in the image captureand focus detection region(s).

Third Embodiment

With the configurations described in the above first and secondembodiments, it is necessary to provide the readout units in one-to-onecorrespondence with the columns, with each readout unit including threereadout circuits; this has the risk of increasing the circuit scale ofthe image sensor 1000. In view of this, a third embodiment describes aconfiguration in which an increase in the circuit scale is suppresseddue to sharing of a storage unit and a readout unit among a plurality ofcolumns.

In the present embodiment, a readout unit is shared among three columnsthat are located at a one-column interval, and the following modes areused: a focus detection readout mode for outputting an A+B image signal,an A image signal, and a B image signal obtained by averaging signals ofthree pixels in the horizontal direction, and a normal readout mode foroutputting only A+B image signals without averaging signals of threepixels in the horizontal direction.

FIGS. 10 and 11 show examples of configurations of storage units 200 andreadout units 300 according to the present embodiment. In the figures,only the first to sixth columns are shown for the sake of simplicity.FIG. 10 shows configurations for the focus detection readout mode,whereas FIG. 11 shows configurations for the normal readout mode.Switching between the focus detection readout mode and the normalreadout mode is enabled by turning on/off switches SW7 to SW38.

In the present embodiment, it will be assumed that a pair of a storageunit 200 and a readout unit 300 is provided per set of three pixelcolumns, and as shown in FIGS. 10 and 11, pixels in the first, third,and fifth columns are connected to a common storage unit 200. Readoutfor pixels in the second, fourth, and sixth columns is performed in adirection opposite to a direction of readout for the pixels in thefirst, third, and fifth columns relative to a pixel region, and thepixels in the second, fourth, and sixth columns are connected to acommon storage unit. That is to say, pixels belonging to a set of threeconsecutive odd-numbered columns share a storage unit 200 and a readoutunit 300 provided below an image sensor 1000, whereas pixels belongingto a set of three consecutive even-numbered columns share a storage unit200 and a readout unit 300 provided above the image sensor 1000. Notethat the storage units are configured in the same way, and so are thereadout units; thus, the storage units 200 and the readout units 300above the image sensor 1000 are omitted from the drawings.

Each storage unit 200 is composed of storage circuits 204, 205, 206. Thestorage circuit 204 includes capacitors C7 to C12, the storage circuit205 includes capacitors C13 to C18, and the storage circuit 206 includescapacitors C19 to C24. Note that the capacitors C7 to C24 have the samecapacitance value.

In the focus detection readout mode shown in FIG. 10, signals ofphotodiodes 101A of pixels in the first, third, and fifth columns areinput to the storage circuit 204. Thus, similarly to the case of FIG.5B, the storage circuit 204 stores a signal obtained by averaging Aimage signals of the pixels in the first, third, and fifth columns.Signals of photodiodes 101B of the pixels in the first, third, and fifthcolumns are input to the storage circuit 206. Thus, the storage circuit206 stores a signal obtained by averaging B image signals of the pixelsin the first, third, and fifth columns. Signals of the photodiodes 101Aand 101B of the pixels in the first, third, and fifth columns are inputto the storage circuit 205. Thus, the storage circuit 205 stores asignal obtained by averaging the signals of the photodiodes 101A and101B of the pixels in the first, third, and fifth columns. As a productof this signal and a doubling gain can be used as an A+B image signal,this signal is referred to as the A+B image signal. That is to say, thestorage circuit 205 stores a signal obtained by averaging A+B imagesignals of the pixels in the first, third, and fifth columns.

The A image signal, A+B image signal, B image signal stored in thestorage circuits 204, 205, 206 undergo A/D conversion and S-N processingin the corresponding readout circuits, and are output to the outside ofthe image sensor in parallel via digital signal lines 307, 308, 309,respectively. In this case, driving timings are similar to thosedescribed in the first embodiment, and thus a description thereof isomitted.

In the normal readout mode shown in FIG. 11, signals of the photodiodes101A and 101B of the pixel in the first column are input to the storagecircuit 204. Thus, the storage circuit 204 stores a signal obtained byaveraging the signals of the photodiodes 101A and 101B of the pixel inthe first column. As a product of this signal and a doubling gain can beused as an A+B image signal, this signal is referred to as the A+B imagesignal. That is to say, the storage circuit 204 stores the A+B imagesignal of the pixel in the first column. Similarly, the storage circuit205 receives, as input, signals of the photodiodes 101A and 101B of thepixel in the third column, and thus stores an A+B image signal of thepixel in the third column. The storage circuit 206 receives, as input,signals of the photodiodes 101A and 101B of the pixel in the fifthcolumn, and thus stores an A+B image signal of the pixel in the fifthcolumn.

The A+B image signals stored in the storage circuits 204, 205, 206undergo A/D conversion and S-N processing in the readout circuits 301,302, 303, and are output to the outside of the image sensor in parallelvia the digital signal lines 307, 308, 309, respectively. In this case,driving timings are similar to those described in the first embodiment,and thus a description thereof is omitted.

By using the above-described configuration, one readout unit can beshared among three columns, and thus an increase in the circuit scalecan be suppressed. The focus detection readout mode for outputting theA+B image signal, A image signal, and B image signal obtained byaveraging signals of three pixels in the horizontal direction can beused in, for example, a moving image mode for performing a focusdetection operation, whereas the normal readout mode for outputting onlyA+B image signals without averaging signals of three pixels in thehorizontal direction can be used in a still image capture mode.

Furthermore, in the present embodiment also, the generation of acaptured image and the focus detection operation can be performed inparallel as the A+B image signal, A image signal, and B image signal areoutput in parallel. As a result, the focus detection operation and thegeneration of the captured image can be performed at a high frame rate.

Fourth Embodiment

The above first to third embodiments have described a configuration inwhich the storage units 200 and the readout units 300 are provided inone-to-one correspondence with the columns, and pixel signals are readout and undergo A/D conversion sequentially on a row-by-row basis. Incontrast, the present embodiment describes a configuration in whichstorage units 200 and readout units 300 are provided in one-to-onecorrespondence with pixels. With this configuration, readout can beperformed at a higher speed as pixel signals can be readout and undergoA/D conversion simultaneously for all pixels.

FIG. 12 shows an example of an overall configuration of an image sensor1000 according to a fourth embodiment. A detailed description ofportions that are identical to those of the first embodiment is omitted.As one example, it will be assumed that the image sensor 1000 accordingto the present embodiment is constructed by stacking a plurality ofsemiconductor chips, that is to say, a pixel region chip 1100, a readoutcircuit chip 1200, and a signal processing chip 1300. The chips areelectrically wired to one another via, for example, microbumps using aknown substrate stacking technique. Note that in the above first tothird embodiments also, the image sensor 1000 may be configured to havea stacked structure.

The pixel region chip 1100 includes a pixel region and a pixel drivingcircuit 1101, and a plurality of pixel units 120 that each have twophotodiodes are arrayed in the pixel region. The pixel driving circuit1101 transmits a driving signal collectively to all pixels in the pixelregion. The readout circuit chip 1200 includes storage units 200,readout units 300, a vertical selection circuit 1201, and a horizontalselection circuit 1202. The storage units 200 and the readout units 300are provided in one-to-one correspondence with the pixel units.Similarly to the first embodiment, each storage unit 200 includes astorage circuit 201 for an A image signal, a storage circuit 202 for anA+B image signal, and a storage circuit 203 for a B image signal.Similarly to the first embodiment, each readout unit 300 includes areadout circuit 301 for the A image signal, a readout circuit 302 forthe A+B image signal, and a readout circuit 303 for the B image signal.As a pair, the vertical selection circuit 1201 and the horizontalselection circuit 1202 select one readout unit 300, and the A+B imagesignal, A image signal, and B image signal stored in the selectedreadout unit 300 are output to an image capture signal processingcircuit 1301 and a focus detection signal processing circuit 1302, whichwill be described later.

The signal processing chip 1300 includes a TG 600, the image capturesignal processing circuit 1301, the focus detection signal processingcircuit 1302, an image capture signal output unit 1303, and a focusdetection signal output unit 1304. The image capture signal processingcircuit 1301 applies various types of signal processing to the A+B imagesignal output from any readout unit 300. The focus detection signalprocessing circuit 1302 applies various types of signal processing tothe A image signal and B image signal output from any readout unit 300.It also calculates a phase difference (an image shift amount) betweenthe A image signal and B image signal by carrying out known correlationcomputation using the A image signal and B image signal. The imagecapture signal output unit 1303 outputs the A+B image signal that hasundergone signal processing in the image capture signal processingcircuit 1301 to the outside of the image sensor as an image capturesignal. The output image capture signal is used by a control unit 1004to generate a captured image. The focus detection signal output unit1304 outputs the result of correlation computation by the focusdetection signal processing circuit 1302 to the outside of the imagesensor 1000. The output result of correlation computation is used by thecontrol unit 1004 to calculate a defocus amount of an image capturelens, and a driving amount of the image capture lens is determined basedon the result of calculation. These image capture signal processing andfocus detection signal processing are executed in parallel.

Note that in some cases, correlation computation for focus detection iscarried out after converting color signals into luminance signals. Inview of this, the focus detection signal processing circuit 1302 mayexecute computation processing for converting the A image signal and Bimage signal of each color into luminance signals. For example,luminance signals YA, YB are generated by calculating luminance valuesthrough application of Bayer merging to the A image signal and B imagesignal. As signals corresponding to a Bayer pattern are necessary incomputation of luminance values, the A image signal and B image signalof each color that have been input to the focus detection signalprocessing circuit 1302 are stored in a memory until all of the signalsnecessary for the computation are obtained. That is to say, as signalsin a row corresponding to G and B are read out after signals in a rowcorresponding to R and G are read out, it is sufficient to store the Aimage signal and B image signal in the row corresponding to R and G tothe memory first, and once the signals in the row corresponding to G andB have been read out, compute luminance signals YA, YB sequentially.Correlation computation is carried out using the calculated luminancesignals YA, YB.

The present embodiment adopts a configuration in which the storage unitand the set of readout circuits for the A+B image signal, A imagesignal, and B image signal are provided on a pixel-by-pixel basis; byforming the pixel region on a chip separate from a chip of the storageunits and the readout circuits as shown in FIG. 12, the area of a pixelcircuit can be secured, and a decrease in an aperture ratio of eachpixel can be prevented.

FIG. 13A is a circuit diagram of the pixel units 120 according to thefourth embodiment. This figure corresponds to FIG. 4 of the firstembodiment, and is identical to FIG. 4 except that selection switchesare not provided; thus, a detailed description thereof is omitted.

FIG. 13B shows configurations of the pixel units 120, the storage units200, and the readout units 300 according to the fourth embodiment. Thisfigure corresponds to FIG. 5A of the first embodiment, and a detaileddescription of portions that are identical to those in FIG. 5A isomitted. As shown in FIG. 13B, the readout circuit chip 1200 includesthe storage units 200 and the readout units 300 that are in one-to-onecorrespondence with the pixel units 120 of the pixel region chip 1100.Each storage unit 200 includes the storage circuit 201 for storing the Aimage signal, the storage circuit 202 for storing the A+B image signal,and the storage circuit 203 for storing the B image signal. Each readoutunit 300 includes the readout circuit 301 for the A image signal, thereadout circuit 302 for the A+B image signal, and the readout circuit303 for the B image signal. A/D conversion processing and S-N processingare executed in parallel in each readout circuit. After the S-Nprocessing, switches SW1 to SW3 of the readout unit selected by the pairof the vertical selection circuit 1201 and the horizontal selectioncircuit 1202 are turned on, and the A+B image signal is output to theimage capture signal processing circuit 1301 of the signal processingchip 1300 via a digital signal line 308. The A image signal and B imagesignal are output to the focus detection signal processing circuit 1302of the signal processing chip 1300 via digital signal lines 307 and 309.

Note that a driving timing chart for an image capturing apparatus 10according to the fourth embodiment is mostly similar to that of FIG. 6.A difference from FIG. 6 is that a selection pulse signal PSEL andcontrol signals PSW4 to PSW6 for switches SW do not exist. In FIG. 6 ofthe first embodiment, driving pulses are transmitted to pixels in a rowselected by the selection pulse signal PSEL; on the other hand, in thepresent fourth embodiment, driving pulses are transmitted simultaneouslyto all pixels. Then, A/D conversion and S-N processing are performed inparallel for all pixels. Thereafter, the switches SW1 to SW3 of thereadout unit 300 selected by the pair of the vertical selection circuit1201 and the horizontal selection circuit 1202 are turned on, and theA+B image signal, A image signal, and B image signal of thecorresponding pixel are output to the signal processing chip 1300. Inthe present embodiment, as the readout units 300 are provided inone-to-one correspondence with the pixel units, a switch SW4 andsubsequent switches do not exit.

As described above, in the present embodiment, readout can be performedat a higher speed as pixel signals can be read out and undergo A/Dconversion simultaneously for all pixels. Furthermore, in the presentembodiment also, a focus detection operation and the generation of acaptured image can be performed in parallel as the A+B image signal, Aimage signal, and B image signal are output in parallel. As a result,the focus detection operation and the generation of the captured imagecan be performed at a high frame rate.

Although the present embodiment adopts a configuration in which thestorage unit and the set of readout circuits for the A+B image signal, Aimage signal, and B image signal are provided on a pixel-by-pixel basis,the present embodiment may alternatively adopt a configuration in whichthe storage unit and the set of readout circuits for the A+B imagesignal, A image signal, and B image signal are shared among a pluralityof pixels, as an application of the third embodiment.

Although the present first to fourth embodiments have described aconfiguration in which two photoelectric conversion portions areprovided within each pixel unit, the number of photodiodes within eachpixel unit is not limited to two. For example, the followingconfiguration may be adopted: four photodiodes are provided within eachpixel unit, four storage circuits and four readout circuits are providedfor focus detection, and one storage circuit and one readout circuit areprovided for an image capture signal. That is to say, provided that thenumber of photoelectric conversion portions within each pixel unit is N,the total number of storage circuits and the total number of readoutcircuits necessary for focus detection and the image capture signal areN+1 each. Furthermore, provided that the number of photoelectricconversion portions is N, in an embodiment corresponding to the thirdembodiment, a pair of a storage unit 200 and a readout unit 300 isprovided per set of N+1 columns, and the number of storage circuits ineach storage unit 200 and the number of readout circuits in each readoutunit 300 are N+1 each. For example, when N is four, a pair of a storageunit 200 and a readout unit 300 is provided per set of five columns,each storage unit 200 includes five storage circuits, and each readoutunit 300 includes five readout circuits.

Although the embodiments of the present invention have been describedthus far, the present invention is by no means limited to theseembodiments.

While the present invention has been described with reference toembodiments, it is to be understood that the invention is not limited tothe disclosed embodiments. The scope of the following claims is to beaccorded the broadest interpretation so as to encompass all suchmodifications and equivalent structures and functions.

This application claims the benefit of Japanese Patent Application Nos.2015-000511, filed Jan. 5, 2015 and 2015-241409, filed Dec. 10, 2015,which are hereby incorporated by reference herein in their entirety.

What is claimed is:
 1. An image sensor being an integral component of animage capturing apparatus, the image sensor comprising: a pixel regionin which a plurality of pixel units are arranged, each pixel unit havinga micro-lens and a plurality of photoelectric conversion portions; adriving circuit that drives the pixel region to output signals from thepixel units in the pixel region; a memory which stores signals outputfrom a part of the photoelectric conversion portions among the pluralityof photoelectric conversion portions in each of the pixel units andsignals output from all of the photoelectric conversion portions in eachof the pixel units; an output circuit that outputs signals based on thesignals output from the part of the photoelectric conversion portionsamong the plurality of photoelectric conversion portions in each of thepixel units and signals based on signals output from all of thephotoelectric conversion portions in each of the pixel units outside ofthe image sensor; and a plurality of A/D converters that convert thesignals output from the pixel units to the digital signals, wherein thepixel region is formed on a first semiconductor substrate, the memory isformed on a second semiconductor substrate that is different from thefirst semiconductor substrate, and the first and second semiconductorsubstrates are stacked on each other, the plurality of A/D convertersare formed on second semiconductor substrate, the memory is arrangedafter the A/D converters, and the memory is configured to store signalsoutput from a plurality of rows of pixel units.
 2. The image sensoraccording to claim 1, further comprising: a signal processor thatperforms a predetermined signal processing on signals output from thememory, wherein the signal processor is formed on a third semiconductorsubstrate that is different from the first and second semiconductorsubstrates, and the first, second and third semiconductor substrates arestacked on each other.
 3. The image sensor according to claim 2, whereinthe memory includes a plurality of storage portions provided inone-to-one correspondence with the pixel units.
 4. The image sensoraccording to claim 1, wherein the plurality of A/D converters areprovided in one-to-one correspondence with the pixel units.
 5. The imagesensor according to claim 1, wherein the memory stores signals of oneframe output from a part of the photoelectric conversion portions amongthe plurality of photoelectric conversion portions in each of the pixelunits and signals output from all of the photoelectric conversionportions in each of the pixel units.
 6. The image sensor according toclaim 1, wherein each of the plurality of A/D converters is shared bythe plurality of pixel units.
 7. The image sensor according to claim 1,further comprising: a signal processor that performs a predeterminedsignal processing on signals output from the memory.
 8. The image sensoraccording to claim 7, wherein the signal processor performs thepredetermined signal processing on signals of at least two color inparallel.
 9. The image sensor according to claim 1, wherein the signalsbased on the signals output from the part of the photoelectricconversion portions among the plurality of photoelectric conversionportions in each of the pixel units arranged in a first area of thepixel region are output outside of the image sensor by the outputcircuit, and the signals based on the signals output from the part ofthe photoelectric conversion portions among the plurality ofphotoelectric conversion portions in each of the pixel units arranged ona second area of the pixel region are not output outside of the imagesensor by the output circuit, and wherein the second area is differentfrom the first area.
 10. The image sensor according to claim 9, whereineach of the first area and the second area are composed of a pluralityof pixel rows.
 11. An image capturing apparatus comprising: an imagesensor, comprising: a pixel region in which a plurality of pixel unitsare arranged, each pixel unit having a micro-lens and a plurality ofphotoelectric conversion portions; a driving circuit that drives thepixel region to output signals from the pixel units in the pixel region;a memory that stores signals output from a part of the photoelectricconversion portions among the plurality of photoelectric conversionportions in each of the pixel units and signals output from all of thephotoelectric conversion portions in each of the pixel units; an outputcircuit that outputs signals based on the signals output from the partof the photoelectric conversion portions among the plurality ofphotoelectric conversion portions in each of the pixel units and signalsbased on signals output from all of the photoelectric conversionportions in each of the pixel units outside of the image sensor; and aplurality of A/D converters that convert the signals output from thepixel units to the digital signals, wherein the pixel region is formedon a first semiconductor substrate, the memory is formed on a secondsemiconductor substrate that is different from the first semiconductorsubstrate, and the first and second semiconductor substrates are stackedon each other, the plurality of A/D converters are formed on the secondsemiconductor substrate, the memory is arranged after the A/Dconverters, and the memory is configured to store signals output from aplurality of rows of pixel units, a controller that determines a drivingamount of an image capture lens using the output signals of the imagesensor; and a driver that drives the image capture lens according to thedriving amount.
 12. The image capturing apparatus according to claim 11,wherein the memory stores signals of one frame output from a part of thephotoelectric conversion portions among the plurality of photoelectricconversion portions in each of the pixel units and signals output fromall of the photoelectric conversion portions in each of the pixel units.13. The image capturing apparatus according to claim 11, wherein theimage sensor further comprising: a signal processor that performs apredetermined signal processing on signals output from the memory,wherein the signal processor is formed on a third semiconductorsubstrate that is different from the first and second semiconductorsubstrates, and the first, second and third semiconductor substrates arestacked on each other.
 14. The image capturing apparatus according toclaim 13, wherein the memory includes a plurality of storage portionsprovided in one-to-one correspondence with the pixel units.
 15. Theimage capturing apparatus according to claim 11, wherein the pluralityof A/D converters are provided in one-to-one correspondence with thepixel units.
 16. The image capturing apparatus according to claim 11,wherein each of the plurality of AID converters is shared by theplurality of pixel units.
 17. The image capturing apparatus according toclaim 11, further comprising: a signal processor that performs apredetermined signal processing on signals output from the memory. 18.The image capturing apparatus according to claim 17, wherein the signalprocessor performs the predetermined signal processing on signals of atleast two color in parallel.
 19. The image capturing apparatus accordingto claim 11, wherein the signals based on the signals output from thepart of the photoelectric conversion portions among the plurality ofphotoelectric conversion portions in each of the pixel units arranged ina first area of the pixel region are output outside of the image sensorby the output circuit, and the signals based on the signals output fromthe part of the photoelectric conversion portions among the plurality ofphotoelectric conversion portions in each of the pixel units arranged ona second area of the pixel region are not output outside of the imagesensor by the output circuit, and wherein the second area is differentfrom the first area.
 20. The image capturing apparatus according toclaim 19, wherein each of the first area and the second area arecomposed of a plurality of pixel rows.